Integrated circuit devices including a dummy gate structure...

Details Integrated circuit devices including a dummy gate structure... Integrated circuit devices including a dummy gate structure...

2005-01-25

2010-02-16

Lewis, Monica (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S347000, C257SE29287

Reexamination Certificate

active

07663205

ABSTRACT:
Integrated circuit devices include a semiconductor substrate and a flux line generating passive electronic element on the semiconductor substrate. A dummy gate structure is arranged on the semiconductor substrate in a region below the passive electronic element. The dummy gate includes a plurality of segments, each segment including a first longitudinally extending part and a second longitudinally extending part. The second longitudinally extending part extends at an angle from an end of the first longitudinally extending part. Ones of the segments extend at a substantially same angle and are arranged displaced from each other in an adjacent nested relationship.

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Merriam-Webster Online Dictionary www.merriam-webster.com.
Office Action for German patent application 10 2005 038 526.5-33; dated Dec. 6, 2006.
Tiemeijer et al. “RecordOSymmetrical Inductors for 10-GHz LC-VCOs in 0.18-•m Gate-Length CMOS”IEEE Electron Device Letters23(12):713-715 (2002).

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