Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-06
2007-03-06
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S332000
Reexamination Certificate
active
10867513
ABSTRACT:
An integrated circuit device includes a substrate that has a trench formed therein. An isolation layer is disposed in the trench and covers a first sidewall portion of the trench. A gate electrode is disposed on a second sidewall portion of the trench.
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Office Action as issued by the German Patent and Trademark Office for German patent application No. 10/152911.2-33 mailed on Apr. 7, 2005.
Lee Kang-yoon
Park Jong-woo
Cao Phat X.
Samsung Electronics Co,. Ltd
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