Integrated circuit device with a semiconductor body and...

Details Integrated circuit device with a semiconductor body and... Integrated circuit device with a semiconductor body and...

2011-02-01

2011-02-01

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S394000, C257S397000, C257S399000, C257S401000, C257S466000

Reexamination Certificate

active

07880226

ABSTRACT:
An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench.

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