Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-08-01
2006-08-01
Smith, Bradley K. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S734000, C257S746000, C977S762000, C977S765000, C977S766000
Reexamination Certificate
active
07084507
ABSTRACT:
An integrated circuit device having vias having good resistance to migration causing the breaking of a wiring line, or an integrated circuit device having a wiring structure that is fined by breaking the limit of lithography technique is provided. The former device comprises a plurality of elements fabricated on a semiconductor substrate, wiring lines for making the elements and the integrated circuit device function, and vias for interconnecting wiring lines in separate layers, the via being formed of one or more cylindrical structures made up of carbon atoms. The latter device comprises a plurality of elements fabricated on a semiconductor substrate and wiring members for making the elements and the integrated circuit device function, at least part of the wiring members being formed of one or more cylindrical structures made up of carbon atoms. The latter device is preferably manufactured by a method comprising using a CVD process for the formation of the cylindrical structures, while applying a direct current electric field so as to grow the cylindrical structures in one direction, or applying an alternating current electric field so as to grow the cylindrical structures in two directions. A semiconductor device using a carbon nanotube and a method of forming a pattern using a carbon nanotube as a mask are also disclosed.
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Fujitsu Limited
Menz Douglas
Smith Bradley K.
Staas & Halsey , LLP
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