Integrated circuit device and method of manufacturing the same

Details Integrated circuit device and method of manufacturing the same Integrated circuit device and method of manufacturing the same

2005-08-23

2005-08-23

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S779000, C438S957000

Reexamination Certificate

active

06933205

ABSTRACT:
The present invention provides an integrated circuit, comprising a semiconductor substrate, an active element formed on the side of one main surface of the semiconductor substrate, an insulating region formed on the side of the main surface of the semiconductor substrate by burying an insulating material in a groove having a depth of at least 20 μm, and a passive element formed directly or indirectly on the insulating region. It is desirable for the passive element to be an inductor.

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