Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-09-10
1993-12-28
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257900, 257408, H01L 2976, H01L 2994
Patent
active
052742610
ABSTRACT:
A transistor (10) having a gate region formed with a thin oxide layer (28) over the gate (24). The gate (24) has a polysilicon spacer (34) formed adjacent to the gate (24) for increasing the resistance to channel hot-electron-induced degradation.
REFERENCES:
patent: 4717941 (1988-01-01), Yamazaki
patent: 4855247 (1989-08-01), Ma et al.
patent: 4868617 (1989-09-01), Chiao et al.
patent: 4876213 (1989-10-01), Pfiester
patent: 4908326 (1990-03-01), Ma et al.
patent: 4908327 (1990-03-01), Chapman
patent: 4925807 (1990-05-01), Yoshikawa
patent: 4951100 (1990-08-01), Parrillo
patent: 4971922 (1990-11-01), Watabe et al.
patent: 5016077 (1991-05-01), Sato et al.
patent: 5024960 (1991-06-01), Haken
patent: 5086006 (1992-02-01), Asahina
Tiao-Yuan Huang et al. Article entitled "A Novel Submicron LDD Transistor With Inverse-T Gate Structure," IEDM, 1986, pp. 742-745.
K. Mayaram, J. Lee & C. Hu, Article entitled "A Model for the Electric Field in Lightly Doped Drain Structures," IEEE Trans. on Elec. Dev., vol. ED-34, No. 7, p. 1509 (1987).
R. Izawa et al. Article entitled "Impact of the Gate-Drain Overlapped Device (Gold) for Deep Submicrometer VLSI," IEEE Trans. on Electron Device, vol. 35, No. 12, (1988), pp. 2088-2093.
I. C. Chen et al. Article entitled "Simple Gate-to-Drain Overlapped Mosfet's Using Poly Spacers for High Immunity to Channel Hot-Electron Degradation," IEEE, Feb. 1, 1990, IEEE Electron Device Letters, vol. 11, No. 2, pp. 78-81.
Tiao-Yuan Huang, et al. Article entitled "Eliminating Spacer-Induced Degradations in LDD Transistors," Proceedings of 1987 International Symposium on VSLI Technology System and Applications (Taipei, Taiwan), pp. 260-264.
Donaldson Richard
Hiller William E.
Loke Steven
Mintel William
Rutkowski Peter T.
LandOfFree
Integrated circuit degradation resistant structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit degradation resistant structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit degradation resistant structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1545151