Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-06-27
1998-11-24
Whitehead, Jr., Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257519, 257520, 257524, 257648, H01L 2362, H01L 2900
Patent
active
058411690
ABSTRACT:
An integrated circuit comprises a plurality of interconnected semiconductor devices, at least one the interconnected devices being dielectrically isolated from the substrate, and at least one other of the interconnected devices being junction isolated from the substrate. In a preferred embodiment, at least one of the junction isolated devices comprises an ESD protection circuit. The ESD protection circuit, which preferably includes a zener diode and more preferably further includes a bipolar transistor, a diode, and a resistor, is formed in a trench-isolated island comprising a semiconductor layer of a conductivity type opposite to that of the substrate. A heavily doped buried semiconductor region of the same conductivity type as the substrate is formed in the island semiconductor layer adjacent to the substrate. The ESD protection circuit in the integrated circuit of the present invention provides protection from transient high voltage peaks such as those induced by electrostatic discharge (ESD); the lowered thermal resistance of the protection circuit allows generated heat to be dissipated without damage to the components of the integrated circuit.
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Harris Corporation
Whitehead Jr. Carl W.
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