Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-09
2011-08-09
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S629000, C438S643000, C438S653000, C438S656000, C257SE23175, C257SE23152
Reexamination Certificate
active
07994047
ABSTRACT:
An integrated circuit contact system is provided including forming a contact plug in a dielectric and forming a first barrier layer in a trench in the dielectric and on the contact plug. Further, the system includes removing a portion of the first barrier layer from the bottom of the first barrier layer and depositing the portion of the first barrier layer on the sidewall of the first barrier layer, and forming a second barrier layer over the first barrier layer and filling a corner area of the trench.
REFERENCES:
patent: 5612254 (1997-03-01), Mu et al.
patent: 5739579 (1998-04-01), Chiang et al.
patent: 5981395 (1999-11-01), Huang et al.
patent: 6077770 (2000-06-01), Hsu
patent: 6306732 (2001-10-01), Brown
patent: 6383917 (2002-05-01), Cox
patent: 6607977 (2003-08-01), Rozbicki et al.
patent: 6764940 (2004-07-01), Rozbicki et al.
patent: 6780762 (2004-08-01), Ireland
patent: 6853081 (2005-02-01), Nakamura et al.
patent: 6905965 (2005-06-01), Subrahmanyan et al.
patent: 6958547 (2005-10-01), Dubin et al.
patent: 7048837 (2006-05-01), Somekh et al.
patent: 7241696 (2007-07-01), Clevenger et al.
patent: 7842605 (2010-11-01), Pradhan et al.
patent: 2001/0050439 (2001-12-01), Graas et al.
patent: 2002/0041028 (2002-04-01), Choi et al.
patent: 2002/0195715 (2002-12-01), Cho
patent: 2003/0116427 (2003-06-01), Ding et al.
patent: 2003/0203615 (2003-10-01), Denning et al.
patent: 2003/0207560 (2003-11-01), Dubin et al.
patent: 2004/0048461 (2004-03-01), Chen et al.
patent: 2004/0171250 (2004-09-01), Chiang et al.
patent: 2004/0188239 (2004-09-01), Robison et al.
patent: 2004/0188842 (2004-09-01), Takewaka et al.
patent: 2004/0211661 (2004-10-01), Zhang et al.
patent: 2004/0266175 (2004-12-01), Chen et al.
patent: 2005/0006222 (2005-01-01), Ding et al.
patent: 2005/0020080 (2005-01-01), Chiang et al.
patent: 2005/0048767 (2005-03-01), Matsumoto
patent: 2005/0272254 (2005-12-01), Ding et al.
patent: 2006/0024953 (2006-02-01), Papa Rao et al.
patent: 2007/0222076 (2007-09-01), Fukasawa et al.
patent: 2008/0190760 (2008-08-01), Tang et al.
patent: 2009/0233438 (2009-09-01), Ding et al.
patent: 2010/0009533 (2010-01-01), Shaviv et al.
Cheng Ning
Mei-Chu Woo Christy
Yao Huade Walter
Advanced Micro Devices , Inc.
Farjami & Farjami LLP
Fourson George
Spansion LLC
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