Integrated circuit contact barrier formation with ion implant

Details Integrated circuit contact barrier formation with ion implant Integrated circuit contact barrier formation with ion implant

1995-02-24

1996-02-20

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

257102, 257655, 257763, 257764, H01L 3300

Patent

active

054931320

ABSTRACT:
A titanium-tungsten barrier layer is sputtered after active areas of a CMOS structure are exposed. An ion implant through the barrier layer and into the active areas disrupts the boundaries between the barrier layer and the underlying active areas. The implant can involve argon or, alternatively, silicon. The resulting structure is annealed. A conductor layer of an aluminum-copper alloy is deposited. An antireflection coating of TiW is deposited. The three-layer structure is then photolithographically patterned to define contacts and local interconnects. The ion implant before anneal results in less contact resistance, which is particularly critical for the barrier layer boundary with positively doped active areas.

REFERENCES:
patent: 4818712 (1989-04-01), Tully
patent: 4853760 (1991-11-01), Abe et al.
patent: 5065220 (1991-11-01), Paterson et al.
"Treatmennt of WTi Contacts on Silicon with Low Energy Argon Ions" (Milosavljevic et al), v. 164, 1988 Thin Solid Films.

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