Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-08-19
2000-04-25
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257133, 257342, 257401, H01L 2976, H01L 2974
Patent
active
060547383
ABSTRACT:
Field-effect-controllable power semiconductor components with a source-connected load are made conducting via a control circuit with an integrated charge pump. When a generator connected to the source side is in operation, then the source potential becomes higher than the drain potential. A parasitic diode therefore carries current in the control circuit. That current turns on a parasitic bipolar transistor that limits the gate potential to a value that is no longer sufficient for making the power semiconductor component conducting. This effect is prevented by connecting a further diode in antiseries with the parasitic diode.
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patent: 5880506 (1999-03-01), Maier et al.
"Design of a High Side Driver in Multipower-BCD and VI Power Technologies" (Contiero et al.), Electron Devices, 1987, Institute of Electrical and Electronics Engineers, pp. 766-769.
"The Smart Power High-Side Switch: Description of a Specific Technology, Its Basic Devices, and Monitoring Circuitries" (Elmoznine et al.), IEEE Transactions on Electron Devices, vol. 37, No. 4, Apr. 1990, pp. 1154-1161.
"Reverse Bias Over Current Protection for Power Field-Effect Transistors", Technical Disclosure Bulletin, vol. 29, No. 2, Jul. 1986, pp. 567-569.
"Secure Circuits with TOPFET" (Lemme), Electronics, vol. 4, 1993, pp. 24-27 .
Sander Rainald
Xu Chihao
Greenberg Laurence A.
Lerner Herbert L.
Nadav Ori
Siemens Aktiengesellschaft
Stemer Werner H.
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