Integrated circuit comprising an amorphous region and method...

Details Integrated circuit comprising an amorphous region and method... Integrated circuit comprising an amorphous region and method...

2008-05-19

2010-11-02

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C257S052000, C257S061000

Reexamination Certificate

active

07825013

ABSTRACT:
An integrated circuit comprises a doped semiconductor portion including an amorphous portion and a contact structure comprising a conductive material. The contact structure is in contact with the amorphous portion. According to another embodiment, an integrated circuit comprises a doped semiconductor portion including a region having a non-stoichiometric composition and a contact structure comprising a conductive material. The contact structure is in contact with the region having a non-stoichiometric composition.

REFERENCES:
patent: 6900854 (2005-05-01), Kim et al.
patent: 7083900 (2006-08-01), Bae
patent: 7433009 (2008-10-01), Kuo
patent: 7491971 (2009-02-01), Nakamura

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