Integrated circuit comprising a transistor and a capacitor,...

Details Integrated circuit comprising a transistor and a capacitor,... Integrated circuit comprising a transistor and a capacitor,...

2011-08-09

2011-08-09

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257SE27016

Reexamination Certificate

active

07994560

ABSTRACT:
An integrated circuit includes a substrate and at least one active region. A transistor produced in the active region separated from the substrate. This transistor includes a source or drain first region and a drain or source second region which are connected by a channel. A gate structure is position on top of said channel and operates to control the channel. The gate structure is formed in a trench whose sidewalls have a shape which converges (narrows) in the width dimension towards the substrate. A capacitor is also formed having a first electrode, a second electrode and a dielectric layer between the electrodes. This capacitor is also formed in a trench. An electrode line is connected to the first electrode of the capacitor. The second electrode of the capacitor is formed in a layer shared in common with at least part of the drain or source second region of the transistor. A bit line is located beneath the gate structure. The integrated circuit may, for example, be a DRAM memory cell.

REFERENCES:
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patent: 2006/0043617 (2006-03-01), Abbott
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Patent Abstracts of Japan, 61 140172, Toshiba Corp., Jun. 27, 1986.
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Patent Abstracts of Japan, 05 102421, Ind Technol Res Inst, Apr. 23, 1993.
Patent Abstracts of Japan, 63 284847, Oki Electric Ind Co Ltd, Nov. 22, 1988.
Preliminary French Search Report, FR 07 56524, dated Feb. 22, 2008.

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