Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate
2011-05-10
2011-05-10
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Systems using particular element
Semiconductive
C365S174000, C365S159000, C257S107000
Reexamination Certificate
active
07940558
ABSTRACT:
An integrated circuit is provided comprising an array of memory cells connected by word and bit lines, respectively, wherein each memory cell comprises a thyristor structure, an anode terminal that connects the thyristor structure with a respective bit line, a gate terminal that connects the thyristor structure with a respective word line, and a cathode terminal. The integrated circuit further comprises a drive/sensing circuitry configured to apply a first sequence of voltage signals at the anode terminal and the gate terminal, wherein the voltage signals are defined with respect to the cathode terminal. The first sequence comprises a first voltage signal at the anode terminal, a second voltage signal at the gate terminal, and thereafter a combination of a third voltage signal at the anode terminal and a fourth voltage signal at the gate terminal, wherein the third voltage signal is lower than the first voltage signal and lower than the fourth voltage signal.
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Edell Shapiro & Finnan LLC
Nguyen Viet Q
Qimonda AG
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