Integrated circuit comprising a photodiode of the floating...

Details Integrated circuit comprising a photodiode of the floating... Integrated circuit comprising a photodiode of the floating...

2011-01-25

2011-01-25

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S079000, C257S408000, C257S431000, C257S462000, C257S509000, C257SE21345, C257SE21458, C257SE27128, C257SE27131, C257SE21133, C257SE29039, C257SE31033, C257SE31032, C257SE31053, C438S059000, C438S174000, C438S181000, C438S217000, C438S309000

Reexamination Certificate

active

07875915

ABSTRACT:
An integrated circuit includes at least one photodiode associated with a read transistor. The photodiode is formed from a stack of three semiconductor layers comprising a buried layer, an floating substrate layer and an upper layer. The drain region and/or the source region of the transistor are incorporated within the upper layer. The buried layer is electrically isolated from the upper layer so as to allow the buried layer to be biased independently of the upper layer.

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