Integrated circuit chip with FETs having mixed body...

Details Integrated circuit chip with FETs having mixed body... Integrated circuit chip with FETs having mixed body...

2007-10-23

2007-10-23

Malsawma, Lex (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C257SE21563

Reexamination Certificate

active

11279063

ABSTRACT:
An Integrated Circuit (IC) chip that may be a bulk CMOS IC chip with silicon on insulator (SOI) Field Effect Transistors (FETs) and method of making the chip. The IC chip includes areas with pockets of buried insulator strata and FETs formed on the strata are SOI FETs. The SOI FETs may include Partially Depleted SOI (PD-SOI) FETs and Fully Depleted SOI (FD-SOI) FETs and the chip may include bulk FETs as well. The FETs are formed by contouring the surface of a wafer, conformally implanting oxygen to a uniform depth, and planarizing to remove the Buried OXide (BOX) in bulk FET regions.

REFERENCES:
patent: 6403435 (2002-06-01), Kang et al.
patent: 6414355 (2002-07-01), An et al.
patent: 6548369 (2003-04-01), van Bentum

Affiliated with

Also associated with

Rating

Integrated circuit chip with FETs having mixed body... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit chip with FETs having mixed body..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit chip with FETs having mixed body... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3843160