Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-12
2007-06-12
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S637000, C438S672000, C977S742000, C977S842000
Reexamination Certificate
active
11008800
ABSTRACT:
A dielectric in an integrated circuit is formed by creating oriented cylindrical voids in a conventional dielectric material. Preferably, voids are formed by first forming multiple relatively long, thin carbon nanotubes perpendicular to a surface of an integrated circuit wafer, by depositing a conventional dielectric on the surface to fill the area between the carbon nanotubes, and by then removing the carbon nanotubes to produce voids in place of the carbon nanotubes. A layer of dielectric and voids thus formed can be patterned or otherwise processed using any of various conventional processes. The use of a conventional dielectric material having numerous air voids substantially reduces the dielectric constant, leaving a dielectric structure which is both structurally strong and can be constructed compatibly with conventional processes and materials.
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Furukawa Toshiharu
Hakey Mark Charles
Holmes Steven John
Horak David Vaclav
Koburger III Charles William
International Business Machines - Corporation
Le Dung A.
Truelson Roy W.
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