Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-12-06
1998-08-18
Picardat, Kevin
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438613, H01L 2144
Patent
active
057958181
ABSTRACT:
An interconnection between bonding pads on an integrated circuit chip and corresponding bonding contacts on a substrate are formed. To form the interconnection, a metallization is formed on each of the substrate bonding contacts. Metal ball bond bumps are formed on selective ones of the bonding pads and then coined. The substrate and integrated circuit chip are heated. The coined ball bond bumps are then placed into contact with the corresponding metallizations, pressure and ultrasonic energy are applied, and a metal-to-metal bond is formed between each coined ball bond bump and the corresponding metallization.
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Amkor Technology Inc.
Hodgson Serge J.
MacDonald Thomas S.
Picardat Kevin
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