Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-07
2007-08-07
Pham, Thanhha S. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S452000, C257S503000, C257SE29012
Reexamination Certificate
active
10991476
ABSTRACT:
An integrated circuit chip is provided. The chip includes a silicon substrate, a circuit, a seal ring, a ground ring and a guard ring. The circuit is formed on the silicon substrate and has an input/output (I/O) pad. The seal ring is formed on the silicon substrate and surrounds the circuit and the I/O pad. The ground ring is formed between the silicon substrate and the I/O pad, and the ground ring is electrically connected with the seal ring. The guard ring is formed above the silicon substrate and surrounds the I/O pad, and the guard ring is electrically connected with the seal ring.
REFERENCES:
patent: 5475255 (1995-12-01), Joardar et al.
patent: 6420208 (2002-07-01), Pozder et al.
patent: 6492716 (2002-12-01), Bothra et al.
patent: 6900969 (2005-05-01), Salling et al.
patent: 2005/0063431 (2005-03-01), Gallup et al.
Airoha Technology Corp.
Pham Thanhha S.
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