Integrated circuit capacitors and process for making the same

Details Integrated circuit capacitors and process for making the same Integrated circuit capacitors and process for making the same

1994-07-11

1997-03-25

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having growth from a solution comprising a solvent which is...

117 70, 117947, C30B 908

Patent

active

056140185

ABSTRACT:
A xylene exchange is performed on a stock solution of BST of greater then 99.999% purity dissolved in methoxyethanol, and a carboxylate of a dopant metal, such as magnesium 2-ethylhexanoate is added to form a precursor. The precursor is spun on a first electrode, dried at 400.degree. C. for 2 minutes, then annealed at 750.degree. C. to 800.degree. C. for about an hour to form a layer of accurately doped BST. A second electrode is deposited, patterned, and annealed at between 750.degree. C. to 800.degree. C. for about 30 minutes. Excellent leakage current results if the dopant is magnesium of about 5% molarity. For other dopants, such as Mg, Nb, Y, Bi, and Sn the preferred dopant range is 0.2% to 0.3% molarity. The magnesium-doped material is used as a buffer layer between the electrodes and BST dielectric of an undoped BST capacitor.

REFERENCES:
patent: 4437139 (1984-03-01), Howard
patent: 4870539 (1989-09-01), Chance et al.
patent: 5160762 (1992-11-01), Brand et al.
patent: 5330931 (1994-07-01), Emesh et al.
patent: 5386120 (1995-01-01), Micheli et al.
E. Fujii, et al.; ULSI DRAM Technology with Ba.sub.0.7 Sr.sub.0.3 TiO.sub.3 Film of 1.3nm Equivalent SiO.sub.2 Thickness and 10.sup.-9 A/cm.sup.2 Leakage Current; IEDM Technical Digest, 1992; pp. 10.3.1-10.3.4.
Kuniaki Koyama, et al.; A Stacked Capacitor with (Ba.sub.x Sr.sub.1-x)TiO.sub.3 For 256 DRAM; IEDM, Dec. 1991; pp. 32.1.1-32.1.4.
W.D. Kingery, et al.; Introduction to Ceramics, Second Edition; pp. 969-971.
G.M.Vest, et al.; Synthesis of Metallo-Organic Compounds For MOD Powders and Films; Materials Research Society Symp. Proc. vol. 60, 1986; pp. 35-42.
Robert W. Vest, et al.; PbTiO.sub.3 Films From Metalloorganic Precursors; IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 35, No. 6, Nov. 1988; pp. 711-717.
M. Azuma, et al.; Electrical Characteristics of High Dielectric Constant Materials For Integrated Ferroelectrics; ISIF, 1992; pp. 109-117.
J.V. Mantese, et al.; Metalorganic Deposition (MOD): A Nonvacuum, Spin-on, Liquid-Based, Thin Film Method; MRS Bulletin, Oct. 1989; pp. 48-53.
B.M. Melnick, et al.; Process Optimization and Characterization of Device Worthy Sol-Gel Based PZT For Ferroelectric Memories; Ferroelectrics, 1990, vol. 109, 1990; pp. 1-23.
Jiyoung Kim et al.; La Doped PZT Films for Gigabit DRAM Technology; Jul. 6, 1994; Symposium on VLSI Technology Digest of Technical Papers; Jun. 7-9, 1994/Honolulu.
Hong-Wen Wang, et al.; The Effect of Dysprosium on the Microstructure and Dielectric Properties of (Ba.sub.1-x Sr.sub.x)TiO.sub.3 Ceramics; ISAF'92; Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics; Greenville, SC; Aug. 30-Sep. 2, 1992.

Affiliated with

Also associated with

Rating

Integrated circuit capacitors and process for making the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit capacitors and process for making the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit capacitors and process for making the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2200194