Integrated circuit buffer devices having built-in electrostatic

Details Integrated circuit buffer devices having built-in electrostatic Integrated circuit buffer devices having built-in electrostatic

1998-02-17

1999-04-20

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

257371, H01L 2974, H01L 2976

Patent

active

058959408

ABSTRACT:
Integrated circuits having built-in electrostatic discharge protection thyristors include a semiconductor substrate with well regions of predetermined conductivity type therein which enable the formation of pairs of built-in thyristors which provided overvoltage protection. The substrate preferably contains first and second well regions of first and second conductivity type, respectively, at spaced locations, and third and fourth well regions of second and first conductivity type, respectively, which form respective P-N junctions with the first and second well regions. A first pair of guard regions of opposite conductivity type is also formed in the third well region, and this first pair of guard regions is electrically coupled to a first reference potential. In addition, a second pair of guard regions of opposite conductivity type is formed in the fourth well region and this pair of guard regions is electrically connected to a second reference potential. A semiconductor region of second conductivity type is also formed in the first well region and a semiconductor region of first conductivity type is formed in the second well region. Finally, a first guard ring of first conductivity type is formed in the first well region and a second guard ring of second conductivity type is formed in the second well region to complete the structures of a pair of thyristors. Here, the first guard ring is preferably electrically connected to the second reference potential and the second guard ring is electrically connected to the first reference potential. An input/output (I/O) pad is also electrically coupled to the semiconductor regions of first and second conductivity type, so that damage caused by excessive voltage can be inhibited upon latch-up of the built-in thyristors.

REFERENCES:
patent: 4692781 (1987-09-01), Rountree et al.
patent: 4952994 (1990-08-01), Lin
patent: 5166089 (1992-11-01), Chen et al.
patent: 5229635 (1993-07-01), Bessolo et al.
patent: 5281842 (1994-01-01), Yasuda et al.
patent: 5290724 (1994-03-01), Leach
patent: 5293055 (1994-03-01), Hara et al.
patent: 5404041 (1995-04-01), Diaz et al.
patent: 5450267 (1995-09-01), Diaz et al.
patent: 5452171 (1995-09-01), Metz et al.
patent: 5468667 (1995-11-01), Diaz et al.
patent: 5689132 (1997-11-01), Ichikawa
patent: 5786617 (1998-07-01), Merrill et al.
Ham, ESD protection circuit formed in a minimized area, application #08/963,105, Nov. 3, 1997.

Affiliated with

Also associated with

Rating

Integrated circuit buffer devices having built-in electrostatic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit buffer devices having built-in electrostatic , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit buffer devices having built-in electrostatic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2249473