Integrated circuit bond pad structures and methods of making

Details Integrated circuit bond pad structures and methods of making Integrated circuit bond pad structures and methods of making

2006-05-02

2006-05-02

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S758000, C257S494000, C257S786000

Reexamination Certificate

active

07038280

ABSTRACT:
A bond pad structure for an integrated circuit includes first and second active devices formed in a substrate, first and second buses above the first and second active devices, respectively, a bond pad above the first and second buses, first interconnections between the first and second active devices and the bond pad, and second interconnections between the first and second active devices and the first and second buses, respectively. The first active device may be at least one PMOS transistor, and the second active device may be at least one NMOS transistor. A guard band region may be formed in the substrate.

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Search Report from corresponding International Application No. PCT/US2004/034647.

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