Integrated circuit arrangement with NPN and PNP bipolar...

Details Integrated circuit arrangement with NPN and PNP bipolar... Integrated circuit arrangement with NPN and PNP bipolar...

2011-06-28

2011-06-28

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C257SE21609

Reexamination Certificate

active

07968416

ABSTRACT:
An integrated circuit arrangement and fabrication method is provided. The integrated circuit arrangement contains an NPN transistor and a PNP transistor. The PNP transistor contains an emitter connection region and a cutout. The cutout delimits the width of the emitter connection region. The electrically conductive material of the connection region laterally overlaps the cutout.

REFERENCES:
patent: 6005284 (1999-12-01), Ejiri et al.

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