Integrated circuit arrangement with intermediate materials...

Details Integrated circuit arrangement with intermediate materials... Integrated circuit arrangement with intermediate materials...

2008-01-01

2008-01-01

Do, Thuan (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C716S030000

Reexamination Certificate

active

10526881

ABSTRACT:
An integrated circuit arrangement having a metallization layer, an interconnect dielectric, electrically conductive interconnect intermediate material, electrically conductive connecting sections, connecting section dielectric between the connecting sections, and connecting section intermediate material. The metallization layer contains electrically conductive interconnects between which the interconnect dielectric is disposed. The electrically conductive interconnect intermediate material is arranged between a side area of an interconnect and the interconnect dielectric. The electrically conductive connecting sections in each case form a section of an electrically conductive connection to or from an interconnect and the connecting section dielectric is between the connecting sections. The connecting section intermediate material is arranged in each case between a connecting section and the connecting section dielectric and/or between a connecting section and an interconnect. The interconnect intermediate material and the connecting section intermediate material make contact with one another at at least one connection.

REFERENCES:
patent: 5661345 (1997-08-01), Wada et al.
patent: 5798299 (1998-08-01), Chung
patent: 6225211 (2001-05-01), Tsui
patent: 6313536 (2001-11-01), Yamada
patent: 2002/0030278 (2002-03-01), Weber
patent: 2002/0033539 (2002-03-01), Wada et al.
patent: 2002/0046874 (2002-04-01), Cabral et al.
patent: 2002/0061644 (2002-05-01), Lopatin et al.
patent: 1 077 486 (2001-02-01), None
patent: 2 366 912 (2002-03-01), None

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