Integrated circuit arrangement with capacitor in an...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S307000, C257S308000, C257S309000, C257S298000, C257S301000, C257S302000, C257S303000, C257SE27016, C257SE27048, C438S397000

Reexamination Certificate

active

07635887

ABSTRACT:
An integrated circuit arrangement includes an undulating capacitor in a conductive structure layer. The surface area of the capacitor is enlarged in comparison with an even capacitor. The capacitor is interlinked with dielectric regions at its top side and/or its underside, so that it can be produced by methods which may not have to be altered in comparison with conventional CMP methods.

REFERENCES:
patent: 6620701 (2003-09-01), Ning
patent: 6646323 (2003-11-01), Dirnecker et al.
patent: 6765255 (2004-07-01), Jin et al.
patent: 7067869 (2006-06-01), Cheng et al.
patent: 7479424 (2009-01-01), Giraudin et al.
patent: 2002/0163029 (2002-11-01), Dirnecker et al.
patent: 2003/0098484 (2003-05-01), Kim
patent: 2003/0155603 (2003-08-01), Liu et al.
patent: 2003/0211731 (2003-11-01), Kai et al.
patent: 2004/0113235 (2004-06-01), Coolbaugh et al.
patent: 102 47 454 (2003-05-01), None

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