Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-06
2007-02-06
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27084, C438S250000
Reexamination Certificate
active
10531493
ABSTRACT:
An integrated circuit arrangement and method of fabricating the integrated circuit arrangement is described. The integrated circuit arrangement contains an insulating region and a sequence of regions which forms a capacitor. The sequence contains a near electrode region near the insulating region, a dielectric region, and a remote electrode region remote from the insulating region. The insulating region is part of an insulating layer arranged in a plane. The capacitor and an active component are arranged on the same side of the insulating layer and form a memory cell. The near electrode region and an active region of the component are arranged in a plane which lies parallel to the plane in which the insulating layer is arranged. A processor is also contained in the integrated circuit arrangement.
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Brederlow Ralf
Hartwich Jessica
Pacha Christian
Rösner Wolfgang
Schulz Thomas
Infineon technologies AG
Pert Evan
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