Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-10-28
1998-06-16
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438633, 438781, 438790, H01L 2128
Patent
active
057670145
ABSTRACT:
The invention relates to an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of a hyperbranched polymer and organic polysilica.
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Hawker Craig Jon
Hedrick James Lupton
Miller Robert Dennis
Bilodeau Thomas G.
International Business Machines - Corporation
Martin Robert B.
Niebling John
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