Integrated circuit and method of manufacturing the same

Details Integrated circuit and method of manufacturing the same Integrated circuit and method of manufacturing the same

2006-11-21

2010-12-14

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S392000, C257S402000, C257S408000, C257S257000, C257S344000, C257S345000, C257SE29178

Reexamination Certificate

active

07851867

ABSTRACT:
An integrated circuit includes: a semiconductor substrate that has a well region containing a first conductivity type impurity; and an enhancement type MOS transistor and a plurality of depletion type MOS transistors, each of which is formed in the well region and has a channel region under a gate electrode. At least one of the depletion type MOS transistors has, in the channel region, an implantation region into which a second conductivity type impurity is implanted so that a threshold voltage is adjusted. The implantation region has the first conductivity type impurity and the second conductivity type impurity. Further, the second conductivity type impurity has a concentration that is higher than a concentration of the first conductivity type impurity.

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