Integrated circuit and method of manufacture

Details Integrated circuit and method of manufacture Integrated circuit and method of manufacture

2007-10-02

2007-10-02

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S296000, C257S315000, C257SE27004, C438S257000, C438S593000, C365S065000, C365S117000

Reexamination Certificate

active

11119660

ABSTRACT:
An integrated circuit having a plurality of active areas separated from each other by a field region and a method for manufacturing the integrated circuit. A first polysilicon finger is formed over the first active area and the field region and a second polysilicon finger is formed over the second active area and the field region. A first dielectric layer is formed over the first active area and the field region and a second dielectric layer is formed over the second active area and the portion of the first dielectric layer over the field region. A first electrical interconnect is formed over and dielectrically isolated from the first polysilicon finger and a second electrical interconnect is formed over and dielectrically isolated from the second active area. The second electrical interconnect is electrically coupled to the second polysilicon finger.

REFERENCES:
patent: 6287951 (2001-09-01), Lucas
patent: 6730566 (2004-05-01), Niimi et al.
patent: 2002/0081794 (2002-06-01), Ito
patent: 2004/0219753 (2004-11-01), Ohno
patent: 0 252 179 (1988-01-01), None

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