Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-03-18
1999-02-02
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438635, 438639, 438768, H01L 2128
Patent
active
058664440
ABSTRACT:
An integrated circuit using conductive interconnects made of aluminum or a material consisting chiefly of aluminum. Defects due to hillocks and whiskers are prevented. The integrated circuit is composed of TFTs. Gate interconnects are made of aluminum. Before a metallization film for forming the gate interconnects is patterned, slits are formed in locations where crosstalks and shorts are likely to occur by generation of hillocks and whiskers. The surfaces inside the slits are anodized. The conductive interconnects are formed, using the locations provided with the slits. In this way, during the anodization, unwanted stress is prevented. Furthermore, it is unlikely that a required electric current cannot be supplied for the anodization because of excessive complexity of the interconnection pattern.
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patent: 5403762 (1995-04-01), Takemura
patent: 5576225 (1996-11-01), Zhang et al.
S. Wolf & R.N. Tauber, "Silicon Processing for the VLSI Era" vol. 1, pp. 221-223, 1986.
S. Wolf, "Silicon Processing for the VLSI Era" vol. II, pp. 268-269, 1990.
Konuma Toshimitsu
Koyama Jun
Teramoto Satoshi
Yamazaki Shunpei
Bowers Charles
Semiconductor Energy Laboratory Co.
Whipple Matha W
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