Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-10-07
2000-08-22
Elms, Richard
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438672, 257775, H01L 2144
Patent
active
06107196&
ABSTRACT:
A method for forming an integrated circuit comprising providing a substrate comprising a node to which electrical connection is to be made; providing a layer of material outwardly of the node; and providing an electrically conductive plug through the layer of material and in electrical connection with the underlying node, the layer of material and conductive plug forming an interlocking discontinuity which effectively prevents displacement of the electrical conductive plug from the node. The present invention also contemplates an integrated circuit wherein an interlocking discontinuity comprises a projection which extends laterally outwardly relative to an electrically conductive plug, or a projection which extends laterally outwardly from a layer of material into an electrically conductive plug.
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Anonymous, IBM Tech. Disc. Bulletin, 38(6)(1995)405 "Method of Anchoring Contact or Via Plugs by Producing Lateral Recess in ILD or IMD Films"--Jun. 1995.
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Elms Richard
Micro)n Technology, Inc.
Wilson Christian D.
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