Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-11-03
2010-12-28
Chu, Chris (Department: 2815)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S631000, C438S687000, C257SE21476, C257S751000, C257S758000, C257S774000
Reexamination Certificate
active
07858519
ABSTRACT:
A method is provided for forming a capping layer comprising Cu, N, and also Si and/or Ge onto a copper conductive structure, said method comprising the sequential steps of: forming, at a temperature range between 200° C. up to 400° C., at least one capping layer onto said copper conductive structure by exposing said structure to a GeH4and/or a SiH4comprising ambient, performing a NH3plasma treatment thereby forming an at least partly nitrided capping layer, forming a dielectric barrier layer onto said at least partly nitrided capping layer, wherein prior to said step of forming said at least one capping layer a pre-annealing step of said copper conductive structure is performed at a temperature range between 250° C. up to 450° C.
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Liu Chung-Shi
Yu Chen-Hua
Chu Chris
IMEC
Knobbe Martens Olson & Bear LLP
Taiwan Semiconductor Manufacturing Company, Ltd. (TSMC)
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