Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-03
2006-10-03
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S302000, C257SE21396, C029S516000
Reexamination Certificate
active
07115933
ABSTRACT:
An integrated circuit has at least one semiconductor device for storing charge that includes at least one elementary active component and at least one elementary storage capacitor. The device includes a substrate having a lower region containing at least one buried capacitive elementary trench forming the elementary storage capacitor, and an elementary well located above the lower region of the substrate and isolated laterally by a lateral electrical isolation region. The elementary active component is located in the elementary well or in and on the elementary well. The capacitive elementary trench is located under the elementary active component and is in electrical contact with the elementary well. In one preferred embodiment, the lateral electrical isolation region is formed by a trench filled with a dielectric material and has a greater depth than that of the elementary well. Also provided is a method for fabricating an integrated circuit that includes a semiconductor device for storing charge.
REFERENCES:
patent: 4649625 (1987-03-01), Lu
patent: 4792834 (1988-12-01), Uchida
patent: 5981332 (1999-11-01), Mandelman et al.
patent: 5998821 (1999-12-01), Hieda et al.
patent: 6600199 (2003-07-01), Voldman et al.
Gris Yvon
Menut Olivier
Bongini Stephen
Fleit Kain Gibbons Gutman Bongini & Bianco P.L.
Huynh Andy
Jorgenson Lisa K.
Nguyen Dao H.
LandOfFree
Integrated circuit and fabrication process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit and fabrication process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit and fabrication process will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3717940