Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-28
2006-03-28
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S173000, C257S200000, C326S031000, C326S068000, C365S189090
Reexamination Certificate
active
07019367
ABSTRACT:
An integrated circuit is disclosed herein. One embodiment of the integrated circuit comprises a power supply conductor, a circuit, at least one bypass capacitor, and an electrostatic protection circuit. The circuit may be located on a first piece of silicon, which may be located on a first insulator. The bypass capacitor may be located on a second piece of silicon, which may be located on second insulator. The electrostatic protection circuit may be located on a third piece of silicon, which may be located on a third insulator. The electrostatic protection circuit is connected to the power supply conductor by way of a first line. The bypass capacitor and the circuit are connected to the power supply conductor by way of a second line. The resistance of the second line is greater than the resistance of the first line.
REFERENCES:
patent: 6198136 (2001-03-01), Voldman et al.
patent: 6392439 (2002-05-01), Tanaka et al.
patent: 6711071 (2004-03-01), Mizuno et al.
patent: 2005/0098798 (2005-05-01), Miyazawa et al.
Henrion Carson D.
Taylor Gary L.
Hewlett--Packard Development Company, L.P.
Nelms David
Nguyen Dao H.
LandOfFree
Integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3539364