Integrated circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S173000, C257S200000, C326S031000, C326S068000, C365S189090

Reexamination Certificate

active

07019367

ABSTRACT:
An integrated circuit is disclosed herein. One embodiment of the integrated circuit comprises a power supply conductor, a circuit, at least one bypass capacitor, and an electrostatic protection circuit. The circuit may be located on a first piece of silicon, which may be located on a first insulator. The bypass capacitor may be located on a second piece of silicon, which may be located on second insulator. The electrostatic protection circuit may be located on a third piece of silicon, which may be located on a third insulator. The electrostatic protection circuit is connected to the power supply conductor by way of a first line. The bypass capacitor and the circuit are connected to the power supply conductor by way of a second line. The resistance of the second line is greater than the resistance of the first line.

REFERENCES:
patent: 6198136 (2001-03-01), Voldman et al.
patent: 6392439 (2002-05-01), Tanaka et al.
patent: 6711071 (2004-03-01), Mizuno et al.
patent: 2005/0098798 (2005-05-01), Miyazawa et al.

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