Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-29
2011-03-29
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257S409000, C257S487000, C257S494000, C257S546000, C257SE29008, C257SE29014
Reexamination Certificate
active
07915676
ABSTRACT:
The invention relates to an integrated circuit having a semiconductor component (10) comprising a first p-type region (12) and a first n-type region (11) adjoining the first p-type region (12), which together form a first pn junction having a breakdown voltage. According to the invention, a further n-type region adjoining the first p-type region or a further p-type region (13) adjoining the first n-type region (11) is provided, the first p-type or n-type region (11) and the further n-type or p-type region (13) adjoining the latter together forming a further pn junction having a further breakdown voltage, the first pn junction and the further pn junction being connected or connectable to one another in such a way that, in the case of an overloading of the semiconductor component, on account of a current loading of the first pn junction, first of all the further pn junction breaks down.
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Denison Marie
Jensen Nils
Infineon - Technologies AG
Maginot Moore & Beck
Warren Matthew E
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