Integrated circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S355000, C257S409000, C257S487000, C257S494000, C257S546000, C257SE29008, C257SE29014

Reexamination Certificate

active

07915676

ABSTRACT:
The invention relates to an integrated circuit having a semiconductor component (10) comprising a first p-type region (12) and a first n-type region (11) adjoining the first p-type region (12), which together form a first pn junction having a breakdown voltage. According to the invention, a further n-type region adjoining the first p-type region or a further p-type region (13) adjoining the first n-type region (11) is provided, the first p-type or n-type region (11) and the further n-type or p-type region (13) adjoining the latter together forming a further pn junction having a further breakdown voltage, the first pn junction and the further pn junction being connected or connectable to one another in such a way that, in the case of an overloading of the semiconductor component, on account of a current loading of the first pn junction, first of all the further pn junction breaks down.

REFERENCES:
patent: 5374565 (1994-12-01), Hsue et al.
patent: 6171891 (2001-01-01), Lee et al.
patent: 6274918 (2001-08-01), Tsai et al.
patent: 6713816 (2004-03-01), Wolf et al.
patent: 197 46 410 (1999-11-01), None
patent: 100 06 519 (2004-03-01), None
patent: 0 905 782 (1999-03-01), None
patent: 0905782 (1999-03-01), None

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