Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2005-05-31
2005-05-31
Le, Thong Q. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S148000, C365S204000
Reexamination Certificate
active
06901020
ABSTRACT:
An integrated charge sensing scheme for sensing the resistance of a resistive memory element is described. The current through a resistive memory cell is used to charge a capacitor coupled to a digit line. The voltage on the capacitor, which corresponds to the voltage on the digit line, is applied to one input of a comparator. When the voltage on the bit line exceeds a predetermined fixed voltage applied to the second input to the comparator less an offset, the comparator switches logic state, charge is drawn off from the capacitor and the capacitor charges again. The process of charging and discharging the capacitor occurs during a predetermined time period and the number of times the capacitor switches during the time period represents the resistance of the memory element.
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Dickstein , Shapiro, Morin & Oshinsky, LLP
Le Thong Q.
Micro)n Technology, Inc.
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