Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-24
2005-05-24
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S003000, C438S239000, C438S680000, C438S685000, C438S686000, C361S311000
Reexamination Certificate
active
06897508
ABSTRACT:
A thin film integrated multilayer capacitor with substantially enhanced capacitance density suitable for Dynamic Random Access Memory (DRAM) and other integrated capacitor applications is formed into a trench or cavity structure with a completely self-aligned atomic layer deposition (ALD) process flow. Each conductor layer is etched with a wet etch to create recesses between the adjacent insulating layers, which recesses are seamlessly filled with dielectric using an ALD process, so that no part of the conductor is ever exposed to ambient atmosphere. Only silicon-based dielectric materials contact the silicon substrate, and the contact area between silicon and the capacitor is minimized both at the top and the bottom. The dielectric layers comprise Al2O3, ZrO2, or HfO2, which is deposited using an ALD process. Capacitance density is greatly enhanced to a C/∈ of above 1500 fF/μ2.
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Nelms David
Patton & Boggs LLP
Sundew Technologies, LLC
Tran Mai-Huong
LandOfFree
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