Integrated capacitor for RF applications with Ta adhesion layer

Details Integrated capacitor for RF applications with Ta adhesion layer Integrated capacitor for RF applications with Ta adhesion layer

2007-08-07

2007-08-07

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S411000, C257S751000, C257S761000, C257SE21008, C257S008000, C257S048000, C257S202000, C257S021000

Reexamination Certificate

active

11131370

ABSTRACT:
A precision RF passive component including: a silicon substrate; a first dielectric layer deposited above the silicon substrate; a first metal layer formed above the first dielectric layer; a second dielectric layer formed above the first metal layer; and a second metal layer formed above the second dielectric layer. In one embodiment a passivation layer is added above the second metal layer. In an exemplary embodiment the first metal layer includes a first adhesion layer, a metal sub-layer, and a second adhesion layer; and the second dielectric layer includes a first diffusion barrier layer, a dielectric sub-layer second diffusion barrier. In an exemplary embodiment, the metal sub-layer includes copper. In another exemplary embodiment the dielectric sub-layer includes SiO2or Si3N4between diffusion barrier layers including SiN.

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