Integrated bipolar and CMOS transistor with titanium nitride int

Details Integrated bipolar and CMOS transistor with titanium nitride int Integrated bipolar and CMOS transistor with titanium nitride int

1990-02-20

1991-11-12

Hille, Rolf

357 43, 357 48, 357 59, 357 71, H01L 2972, H01L 2704, H01L 2904, H01L 2348

Patent

active

050652087

ABSTRACT:
A process is disclosed with integrated steps for fabricating bipolar and CMOS transistors. Mask, patterning and implanting steps are highly integrated to reduce the fabrication complexity. The integrated steps include a split level polysilicon step wherein PMOS and NMOS gate conductors and a bipolar emitter structure is formed. The polysilicon is heavily doped which forms MOS transistor gate electrodes, and another high impurity concentration area which is later diffused into an underlying bipolar base region. Small area, high performance transistors can be fabricated with laterally extending contact strips. Alignment of electrode metallization patterns is thus less critical.

REFERENCES:
patent: 4481706 (1984-11-01), Roche
patent: 4484211 (1984-11-01), Takemoto et al.
patent: 4539742 (1985-09-01), Kanzaki et al.
patent: 4583106 (1986-04-01), Anantha et al.
patent: 4811076 (1989-03-01), Tigelaar et al.

Affiliated with

Also associated with

Rating

Integrated bipolar and CMOS transistor with titanium nitride int does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated bipolar and CMOS transistor with titanium nitride int, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated bipolar and CMOS transistor with titanium nitride int will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1015892