Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-11-27
2007-11-27
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C257S751000, C257S761000
Reexamination Certificate
active
10945777
ABSTRACT:
An integrated barrier and seed layer that is useful for creating conductive pathways in semiconductor devices. The barrier portion of the integrated layer prevents diffusion of the conductive material into the underlying dielectric substrate while the seed portion provides an appropriate foundation upon which to deposit the conductive material. The barrier portion of the integrated layer is formed of a metal nitride, while the seed portion is formed of ruthenium or a ruthenium alloy. The metal nitride forms an effective barrier layer while the ruthenium or ruthenium alloy forms an effective seed layer for a metal such as copper. In some embodiments, the integrated layer is formed in a way so that its composition changes gradually from one region to the next.
REFERENCES:
patent: 5969422 (1999-10-01), Ting et al.
patent: 2003/0129826 (2003-07-01), Werkhoven et al.
patent: 2003/0203617 (2003-10-01), Lane et al.
patent: 2004/0108217 (2004-06-01), Dubin
The Electrochemical Society, Inc.: “Ruthenium-Based Copper Diffusion Barrier: Studied by Electrochemistry”, SIMS Depth Profiling and Sheet Resistance Measurements 2003 Abs. 595 204thMeeting. Oliver Chyan, et al., Department of Chemistry, Department of Materials Sciene, University of North Texas, Denton, Texas (1 page).
The Journal of The Electrochemical Society: “Atomic Layer Deposition of Ruthenium Thin Films for Copper Glue Layer” 151 (2) G109-G112 (2004) 0013-4651/2004/151(2)/G109/4/$7.00 The Electrochemical Society, Inc. Oh-Kyum Kwon (a), Hyoung-Sang Park (b), et al. (a) Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Yusong-gu, Taejon 305-701. Korea (b) Genitech, Incorporation, Taedok-gu, Taejon 306-230, Korea (4 pages).
Entegris, Protecting and Transporting the Critical Materials Enabling the World's Leading Technologies: “Transition Metals Show Promise as Copper Barriers” Ishita Goswami and Ravi Laxman, ATMI, San Jose, May 1, 2004 Semiconductor International (6 pages) http://www.reed-eectronics.com/semiconductor/index.asp?layout.
Burke Peter A.
Kwak Byung-Sung L.
Sun Sey-Shing
Beyer & Weaver, LLP
LSI Corporation
Perkins Pamela E
Wilczewski Mary
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