Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-05
2008-10-28
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S668000, C257S773000, C257S774000, C257SE23174
Reexamination Certificate
active
07442641
ABSTRACT:
A method of processing a semiconductor device is provided. The method includes providing a semiconductor device supported by a carrier structure. The carrier structure defines a plurality of vias from a first surface of the carrier structure adjacent the semiconductor device to a second surface of the carrier structure. The method also includes extending a conductor through one of the vias such that a first end of the conductor at least partially extends below the second surface. The method also includes electrically coupling another portion of the conductor to a portion of the semiconductor device.
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patent: 2002/0027265 (2002-03-01), Yoneda et al.
patent: 2004/0025332 (2004-02-01), Haberer et al.
patent: 02-112264 (1990-04-01), None
patent: WO 03/067940 (2003-08-01), None
Beatson David T.
Ling Jamin
Kulicke and Soffa Industries Inc.
Spletzer Christopher M.
Thai Luan
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