Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-01-08
2008-12-30
Chen, Kin-Chan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S693000
Reexamination Certificate
active
07470624
ABSTRACT:
A method for making a semiconductor device is provided which comprises (a) creating a first data set (301) which defines a first set of tiles (303) for a trench chemical mechanical polishing (CMP) process; (b) deriving a first trench CMP mask set (307) and at least one epitaxial growth mask set (321, 331) from the first data set, wherein the at least one epitaxial growth mask set corresponds to tiles (305, 307) present on first (203) and second (207) distinct semiconductor surfaces; (c) reconfiguring the first trench CMP mask set to account for the at least one epitaxial growth mask set, thereby defining a second trench CMP mask set (308), wherein the second trench CMP mask set defines a set of trench CMP tiles; and (d) using the second trench CMP mask set to make a semiconductor device.
REFERENCES:
patent: 5278105 (1994-01-01), Eden et al.
patent: 6093631 (2000-07-01), Jaso et al.
patent: 6242324 (2001-06-01), Kub et al.
patent: 6323113 (2001-11-01), Gabriel et al.
patent: 6593226 (2003-07-01), Travis et al.
patent: 6611045 (2003-08-01), Travis et al.
patent: 6614062 (2003-09-01), Chheda et al.
patent: 6764919 (2004-07-01), Yu et al.
patent: 6905967 (2005-06-01), Tian et al.
patent: 6948146 (2005-09-01), Allen et al.
patent: 7103863 (2006-09-01), Riepe et al.
patent: 7125785 (2006-10-01), Cohen et al.
patent: 2002/0065023 (2002-05-01), Kwok
patent: 2005/0097490 (2005-05-01), Travis et al.
patent: 2005/0133832 (2005-06-01), Murthy et al.
patent: 2006/0228850 (2006-10-01), Tsai et al.
patent: 2007/0015346 (2007-01-01), Cohen et al.
patent: 2007/0224795 (2007-09-01), Chen et al.
Cave Nigel
Kolagunta Venkat
Tian Ruiqi
Travis Edward O.
Zia Omar
Chen Kin-Chan
Fortkort John A.
Fortkort & Houston P.C.
Freescale Semiconductor Inc.
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