Integratable polarization rotator

Details Integratable polarization rotator Integratable polarization rotator

2006-11-28

2006-11-28

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000, C257S422000, C257S423000, C257S425000, C257S427000

Reexamination Certificate

active

07141843

ABSTRACT:
Embodiments of the invention provide a polarization rotator. The polarization rotator may be integrated with a waveguide on a substrate, and may include a ferromagnetic semiconductor layer on the substrate, a first doped layer on the ferromagnetic semiconductor layer, and a second doped layer on the first doped layer.

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Y.D. Park et al. A Group-IV Ferromagnetic Semiconductor: MnxGe1-x, Science, vol. 295, Jan. 2002, pp. 651-654.
J.M. Kikkawa et al. “Resonant Spin Amplification in n-Type GaAs”, The American Physical Society, Physical Review Letters, vol. 80, No. 19, May 1998, pp. 4313-4316.
K. Brunner et al. Fabrication and Band Alignment of Pseudomorphic Si1-y Cy, Si1-x-yGexCy and Coupled Si 1-yCy/Si1-z-yG3xCy Quantum Well Structures on Si Substrates, Journal of Crystal Growth, 175/176 (1997) 451-458.

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