Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2007-09-28
2011-12-13
Fulk, Steven J (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257SE29324, C438S052000
Reexamination Certificate
active
08076738
ABSTRACT:
Embodiments of the invention are related to micromachine structures. In one embodiment, a micromachine structure comprises a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element comprises a FinFET structure having a height and a width, the height being greater than the width.
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Kolb Stefan
Mahnkopf Reinhard
Pacha Christian
Weber Werner
Winkler Bernhard
Fulk Steven J
Infineon - Technologies AG
Patterson Thuente Christensen Pedersen , P.A.
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