Integral circuit including non-volatile memory cell

Details Integral circuit including non-volatile memory cell Integral circuit including non-volatile memory cell

2008-06-09

2010-12-07

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S326000, C257S392000, C438S258000, C438S266000, C438S588000, C438S592000

Reexamination Certificate

active

07847337

ABSTRACT:
A semiconductor device including a semiconductor substrate, and a memory cell and a peripheral circuit provided on the semiconductor substrate, the memory cell having a first insulating film, a first electrode layer, a second insulating film, and a second electrode layer provided on the semiconductor substrate in order, and the peripheral circuit having the first insulating film, the first electrode layer, the second insulating film having an opening for the peripheral circuit, and the second electrode layer electrically connected to the first electrode layer through the opening for the peripheral circuit, wherein a thickness of the first electrode layer under the second insulating film of the peripheral circuit is thicker than a thickness of the first electrode layer of the memory cell.

REFERENCES:
patent: 2005/0189606 (2005-09-01), Nakagawa
patent: 2005/0236661 (2005-10-01), Matsui et al.
patent: 2007/0267685 (2007-11-01), Ishibashi
patent: 2002-176114 (2002-06-01), None
http://www.ecse.rpi.edu/˜schubert/Course-Teaching-modules/A26-Wet-chemical-etching-of-SiO2-with-BOE.pdf.

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