Insulator layer based MEMS devices

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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Details

C257S414000, C438S050000, C438S052000, C438S053000

Reexamination Certificate

active

07956429

ABSTRACT:
The present invention relates to using an insulator layer between two metal layers of a semiconductor die to provide a micro-electromechanicalsystems (MEMS) device, such as an ohmic MEMS switch or a capacitive MEMS switch. In an ohmic MEMS switch, the insulator layer may be used to reduce metal undercutting during fabrication, to prevent electrical shorting of a MEMS actuator to a MEMS cantilever, or both. In a capacitive MEMS switch, the insulator layer may be used as a capacitive dielectric between capacitive plates, which are provided by the two metal layers. A fixed capacitive element may be provided by the insulator layer between the two metal layers. In one embodiment of the present invention, an ohmic MEMS switch, a capacitive MEMS switch, a fixed capacitive element, or any combination thereof may be integrated into a single semiconductor die.

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patent: 6635919 (2003-10-01), Melendez et al.
patent: 7471176 (2008-12-01), Bunyan et al.
patent: 7709285 (2010-05-01), Van Beek et al.
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patent: 2006/0208823 (2006-09-01), Hunt et al.
patent: 2006/0226735 (2006-10-01), Ikehashi
patent: 2006/0270238 (2006-11-01), Izumi et al.
patent: 2008/0090320 (2008-04-01), Heck

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