Insulative guard ring for a semiconductor device

Details Insulative guard ring for a semiconductor device Insulative guard ring for a semiconductor device

1998-04-08

2000-11-21

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257452, 257457, 257510, 257647, H01L 2976

Patent

active

061507016

ABSTRACT:
A semiconductor device and fabrication method thereof restrains an amplified current between input voltage Vin and ground voltage Vss, and first and second n-wells are biased into internal voltage sources, whereby the current-voltage characteristic of the input pad becomes stabilized during an open/short checkup of a semiconductor device. The semiconductor device includes a semiconductor substrate having a plurality of device isolation regions, first and second n-wells horizontally spaced from either of the plurality of device isolation regions, a p-channel transistor formed in the second n-well, an input protection transistor horizontally spaced from the first n-well and the device isolation region, on a symmetrical portion by the first n-well to the second n-well, and a guard ring formed between the first n-well and the input protection transistor.

REFERENCES:
patent: 4137109 (1979-01-01), Aiken et al.
patent: 5319235 (1994-06-01), Kihara et al.
patent: 5525824 (1996-06-01), Himi et al.
patent: 5859450 (1999-01-01), Clark et al.

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