Insulative cap for laser fusing

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S665000, C257S797000

Reexamination Certificate

active

06784516

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Technical Field
The present invention relates generally to integrated circuits having fuse elements, and more particularly, to a laser fuse deletion process.
2. Related Art
Fuses formed within integrated circuits serve several functions. For example, fuses may be formed within a circuit to provide redundancy. In other words, particular fuses may be deleted or opened to re-route circuitry along alternate pathways in the event of a failure. Alternatively, fuses may be selectively deleted to form a matrix of opens and shorts unique to that circuit which may easily be recognized by an electrical computer identification system.
Laser fusing processes are typically used to delete specific fuses. During a laser fuse deletion process the fuse structure, including the size, shape and material of the fuse itself, as well as the type and thickness of the material covering the fuse, are of critical importance to the quality of the fuse deletion. Accordingly, it is desirable to optimize any or all of these parameters to enhance the success of the fuse deletion process.
SUMMARY OF THE INVENTION
The first general aspect of the present invention provides a semiconductor device comprising: a substrate; at least one fuse formed within the substrate; and an etch resistant layer over at least one of the formed fuses.
The second general aspect of the present invention provides a method of forming a fuse structure, comprising: providing a substrate having at least one fuse formed therein; and depositing an etch resistant layer over a surface of the substrate.
The third general aspect of the present invention provides a method of performing a fuse deletion process, comprising: providing a substrate having at least one fuse therein, an etch resistant layer over the fuse and at least one insulative layer over the etch resistant layer; removing a portion of the at least one insulative layer above the fuse to the etch resistant layer; and applying a radiant energy source to the fuse until the etch resistant layer is partially removed.
The foregoing and other features and advantages of the invention will be apparent from the following more particular description of the embodiments of the invention.


REFERENCES:
patent: 4198744 (1980-04-01), Nicolay
patent: 4536949 (1985-08-01), Takayama et al.
patent: 5041897 (1991-08-01), Machida et al.
patent: 5273920 (1993-12-01), Kwasnick et al.
patent: 5447887 (1995-09-01), Filipiak et al.
patent: 5606301 (1997-02-01), Ishimura
patent: 5652459 (1997-07-01), Chen
patent: 5659201 (1997-08-01), Wollesen
patent: 5731624 (1998-03-01), Motsiff et al.
patent: 5903041 (1999-05-01), La Fleur et al.
patent: 5955773 (1999-09-01), Stamper
patent: 6074940 (2000-06-01), Lee et al.
patent: 6100116 (2000-08-01), Lee et al.
patent: 6104079 (2000-08-01), Stamper
patent: 6111301 (2000-08-01), Stamper
patent: 6127721 (2000-10-01), Narayan et al.
patent: 6300252 (2001-10-01), Ying et al.
patent: 6335229 (2002-01-01), Pricer et al.
patent: 6372556 (2002-04-01), Ko
patent: 6518643 (2003-02-01), McDevitt et al.
patent: 1-225135 (1989-09-01), None
patent: 3-222460 (1991-10-01), None
patent: 7-176841 (1995-07-01), None
patent: 8-274178 (1996-10-01), None
patent: 11-26589 (1999-01-01), None
patent: 11-54627 (1999-02-01), None
patent: 11-121623 (1999-04-01), None
patent: 11-214389 (1999-08-01), None
patent: 2000-12691 (2000-01-01), None
IBM Technical Disclosure Bulletin, vol. 32, No. 3A, Aug. 1989, Fuse Structure for Wide Fuse Materials Choice, pp. 438-439.
Silicon Nitride Coatings on Copper, Audisio et al., vol. 119, No. 4, Apr. 1972, Electrochemical Society, pp. 408-411.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Insulative cap for laser fusing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulative cap for laser fusing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulative cap for laser fusing will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3269258

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.