Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-16
2007-10-16
Quach, T. N. (Department: 2826)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S639000, C438S745000, C257SE21576
Reexamination Certificate
active
11244293
ABSTRACT:
An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.
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Notification of Reasons for Refusal issued by the Japanese Patent Office on Feb. 20, 2007, for Japanese Patent Application No. 2003-202486, and English-language translation thereof.
Kawamoto Hiroshi
Matsumura Tsuyoshi
Miyasato Mikie
Nakajima Takahito
Uozumi Yoshihiro
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Quach T. N.
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