Insulating layer patterning method, insulating layer formed...

Details Insulating layer patterning method, insulating layer formed... Insulating layer patterning method, insulating layer formed...

2007-01-16

2009-08-25

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S708000

Reexamination Certificate

active

07579283

ABSTRACT:
Provided is an insulation layer patterning method employing a flowable oxide, which does not use a photo-resist. Also, an insulation layer pattern and display devices including the insulation layer are disclosed.

REFERENCES:
patent: 6403407 (2002-06-01), Andry et al.
patent: 7177072 (2007-02-01), Nihei et al.

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