Insulating layer having graded densification

Details Insulating layer having graded densification Insulating layer having graded densification

2005-10-25

2005-10-25

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S637000, C257S642000, C257S702000, C438S622000, C438S623000, C438S624000, C438S781000

Reexamination Certificate

active

06958524

ABSTRACT:
A method of manufacturing an insulating layer, including forming a first dielectric layer having a first pore size over a substrate, shrinking the first pore size to a second pore size by a first densification process, forming a second dielectric layer over the first dielectric layer, and increasing an aggregate dielectric constant of the first and second dielectric layers by a second densification process.

REFERENCES:
patent: 6365506 (2002-04-01), Chang et al.
patent: 6368979 (2002-04-01), Wang et al.
patent: 6372661 (2002-04-01), Lin et al.
patent: 6472306 (2002-10-01), Lee et al.
patent: 6472335 (2002-10-01), Tsai et al.
patent: 6486059 (2002-11-01), Lee et al.
patent: 6500770 (2002-12-01), Cheng et al.
patent: 6514881 (2003-02-01), Coffman
patent: 6525428 (2003-02-01), Ngo et al.
patent: 6528409 (2003-03-01), Lopatin et al.
patent: 6537896 (2003-03-01), Catabay et al.
patent: 6831370 (2004-12-01), Farrar

Affiliated with

Also associated with

Rating

Insulating layer having graded densification does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulating layer having graded densification, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulating layer having graded densification will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3448485